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张冠张

职称:助理教授
电话:0755-26033013
办公室:A314
Email:kcchang@pkusz.edu.cn
实验室网站:https://web.pkusz.edu.cn/smedl/
研究方向:1. 神经形态器件和电路;2. 生物电子;3. 新型存储器;4. 超临界流体 ;5.薄膜晶体管。
职称 助理教授 电话 0755-26033013
办公室 A314 Email kcchang@pkusz.edu.cn
研究方向 1. 神经形态器件和电路;2. 生物电子;3. 新型存储器;4. 超临界流体 ;5.薄膜晶体管。 实验室网站 https://web.pkusz.edu.cn/smedl/

导师与研究领域、方向:

  • 威斯尼斯人娱乐官方网站深圳研究生院 澳门威斯尼斯人wns888app 助理教授(博导)

  • 国立中山大学 材料与光电学系 博士后研究员

  • 国立中山大学 材料与光电学系 博士

    (导师:施敏 院士 美国国家工程院、中国工程院外籍院士)

  • 东海大学 化学系 学士

本人重点开展神经形态电子、生物电子、新型存储器、超临界流体等研究。开发基于生物材料的多种神经形态电子器件,在此基础上进行类脑计算研究;开发新型存储器,在器件结构、综合性能、三维集成方面不断探索;拓展高兼容性的绿色超临界流体技术在电子领域的应用,通过超临界处理改善各类电子器件和材料(包括存储器、薄膜晶体管、第三代半导体、二维材料等)的综合性能。

目前主要研究内容包括:

1.神经形态电子(器件与应用集成):研究开发基于多种材料和不同器件结构的人工神经元/突触器件,对神经形态的多样可塑性进行深入探讨,实现超低电压驱动的神经形态器件。同时开发先进神经形态算法,在软硬件结合方式下,以最低的功耗和代价实现对生物神经网络的模拟。

2.生物电子集成(生物可兼容性器件):研究开发基于各类可降解的生物兼容/纯生物材料的超低电压、超低功耗电子器件,并应用在智慧医疗、仿生、能源、传感等领域。

3.新型存储器(器件与电路集成):研究包括材料选择、器件结构优化设计、理论模型。实现的阻变存储器的性能和可靠性可达世界最先进水平。同时也不断深化与产业界相关合作,共同推进存储器综合性能的进步和集成度的提高。

4.超临界流体技术(微纳电子器件修饰):超临界流体态是一种介于液体和气体之间的物质的第四相态。深入开展超临界流体与电子器件和材料之间的一系列研究,成功修复多种器件和材料内部缺陷(尤其对制备完成之后的器件依然有效)。研究主题不仅致力于创新性,同时兼顾绿色环保和可持续发展。

5.先进显示:从材料、器件结构、工艺流程出发,开发高性能低功耗的薄膜晶体管,多方位提升薄膜晶体管的性能,以匹配其在先进显示领域的应用。

讲授课程:

1. 半导体器件与工艺

2. 半导体测试与分析

承担的代表性项目:

1. 国家自然科学基金面上项目(2020.01-2024.12)

2. 国家自然科学基金重大项目培育计划(2021.01-2024.12)

3. 广东省自然科学基金面上项目(2019.10-2021.10)

4. 深圳市稳定支持计划(2020.09-2023.09)

学术成果:

本人近年(2009~迄今)发表SCI论文150余篇,其中以第一作者或通讯作者身分发表的SCI国际期刊共51篇。所有SCI论文被引用总计3,189次,其中他引2319次(统计截至20228月),H-index33。共发表SCI国际期刊133篇,H-index24被引用总次数:1402次。(更新版详见实验室主页)

相关研究成果共申请/授权中国(包括中国台湾)专利32项,美国专利11项。

代表著作目录列表(Publication List)

近三年内在SCI国际期刊上发表的论文,节选代表作20: *:通讯作者

[1] L. D. Hu#, L. Li#, K. C. Chang*张冠张, X. N. Lin, P. Huang, S. D. Zhang, “Ultrasensitive Freestanding and Mechanically Durable Artificial Synapse with Attojoule Power Based on Na-Salt Doped Polymer for Biocompatible Neuromorphic Interface”, Advanced Functional Materials, 2021, 31, 2106015. (Front pieces)

[2] L. Li, L. D. Hu, K. Liu, K. C. Chang*张冠张, R. Zhang, X. Lin, S. D. Zhang, P. Huang, H. J. Liu, and T. P. Kuo, “Bifunctional homologous alkali-metal artificial synapse with regenerative ability and mechanism imitation of voltage-gated ion channels”, Material Horizons, 2021, 8, 3072-3081. (Back Cover)

[3] Z. H. Peng, F. C. Wu, L. Jiang, G. S. Cao, B. Jiang, G. Cheng, S. W. Ke, K. C. Chang*张冠张, L. Li, C. Ye, “HfO2-Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri-Layer HfO2/BiFeO3/HfO2 Design”, Advanced Functional Materials, 2021, 2107131.

[4] K. C. Chang张冠张, K. Liu, L. D. Hu, L. Li, X. Lin, S. D. Zhang, R. Zhang, H. J. Liu and T. P. Kuo, “Supercritical Ammoniation-Enabled Interfacial Polarization for Function-Mode Transformation and Overall Optimization of Thin-Film Transistors, ACS Applied Materials and Interfaces, 2021, 13, 40053–40061.

[5] K. C. Chang张冠张, Q. Zhou, K. Liu, L. Li, R. Zhang, H. J. Liu, T. Z. Kuo, “Eco-Friendly, Highly Efficient Ethanol-Assisted Supercritical Preparation of an Ultrathin ZnO Nanotube”, ACS Sustainable Chemistry and Engineering, 2021, 9(46), 15478–15483.

[6] K. C. Chang(张冠张), K. Liu, L. D. Hu, L. Li, X. Lin, S. D. Zhang, R. Zhang, H. J. Liu and T. P. Kuo, “Exploration of Physicochemical Mechanism for Negative Bias Temperature Instability in GaN-HEMTs by Extracting Activation Energy of Dislocations”, Advanced Materials Interfaces, 2022, 9(24), 2200871.

[7] F. Zheng, L. Li, K. C. Chang*(张冠张), “Self-Alignment Embedded Thin-Film Transistor with High Transparency and Optimized Performance”, Advanced Materials Technologies, 2022, 13, 2200879.

[8] K. C. Chang(张冠张), T. J. Dai, L. Li, X. N. Lin, S. D. Zhang, Y. C. Lai, H. J. Liu and Y. E. Syu, “The observation of Gaussian distribution and origination identification of deep defects in AlGaN/GaN MIS-HEMT”, Applied Physics Letters, 2022, 120(17), 172107.

[9] L. Li, T. J. Dai, K. Liu, K. C. Chang*(张冠张), R. Zhang, X. Lin, H. J. Liu, Y. C. Lai and T. P. Kuo, “Achieving complementary resistive switching and multi-bit storage goals by modulating the dual-ion reaction through supercritical fluid-assisted ammoniation”, Nanoscale, 2021, 13, 14035–14040. (Front Cover Inside)

[10] K. C. Chang(张冠张), T. J. Dai, L. Li, X. N. Lin, S. D. Zhang, Y. C. Lai, H. J. Liu and Y. E. Syu, “Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory”, Nanoscale, 2020, 12(43), 22070-22074. (Back Cover Inside)

[11] L. Li, K. C. Chang*(张冠张), R. Zhang, X. Lin, Y. C. Lai and T. P. Kuo, “Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process”, Nanoscale, 2020,12, 15721-15724.

[12] K. C. Chang(张冠张), L. D. Hu, K. Qi, L. Li, X. Lin, S. D. Zhang, Z. W. Wang, Y. C. Lai, H. J. Liu and T. P. Kuo, “Low-temperature supercritical dehydroxylation for achieving an ultra-low subthreshold swing of thin-film transistors”, Nanoscale, 2021,13(11), 5700-5705. (Back Cover)

[13] K. Qi#, L. Li#, K. C. Chang*(张冠张), X. N. Lin, H. J. Liu, Y. C. Lai, H. T. Zheng, G. Y. Huang, and T. P. Kuo, “A supercritical removal method: the rapid elimination of impurities in polymethyl-methacrylate at near room temperature and a mechanism investigation of insulating property improvements”, Journal of Materials Chemistry C, 2020, 8(44), 15664-15668.

[14] Z. L. Xin, Y. Tan, T. Chen, E. Iranmanesh, L. Li, K. C. Chang*(张冠张), S. D. Zhang, C. Liu and H. Zhou*, “Visible-light-stimulated synaptic InGaZnO phototransistors enabled by wavelength-tunable perovskite quantum dots”, Nanoscale Advances, 2021, 3(17), 5046-5052.

[15] L. Li, K. C. Chang*(张冠张), C. Ye*, X. Lin, R. Zhang, Z. Xu, W. Xiong, Y. Zhou and T. P. Kuo, “An Indirect Way to Achieve Comprehensive Performance Improvement of Resistive Memory: When Hafnium Meets ITO in Electrode”, Nanoscale, 2020, 12(5), 3267-3272.

[16] C. Ye, Z. Xu, K. C. Chang*(张冠张), L. Li, X. N. Lin, R. Zhang, Y. Zhou, W. Xiong, T. P. Kuo, “Hafnium nanocrystals observed in a HfTiO compound film bring about excellent performance of flexible selectors in memory integration”, Nanoscale, 2019,11(43), 20792-20796.

[17] L. Li, K. C. Chang*(张冠张), X. Lin, R. Zhang, J. H. Lou, Insulating Property Improvement of Polyimide in Devices by Low-Temperature Supercritical Fluids, Advanced Electronic Materials, 2019, 5(12), 1900580.

[18] L. D. Hu, H. J. Lou*, W. T. Li, K. C. Chang*(张冠张)and X. N. Lin*, “Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure”, IEEE Transactions on Electron Devices,2021, 68(1), 399-404.

[19] B. W. Chen, T. C. Chang, K. C. Chang*(张冠张), Y. J. Hung, S. P. Huang, H. M. Chen, P. Y. Liao, Y. H. Lin, H. C. Huang, H. C. Chiang, C. I. Yang, Y. Z. Zheng, A. K. Chu, H. W. Li, C. H. Tsai, H. H. Lu, T. J. Wang, T. C. Chang, “Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors”, ACS Applied Materials & Interfaces, 2017, 9(13), 11942-11949.

[20] K. C. Chang(张冠张), R. Zhang, T. C. Chang, T. M. Tsai, T. J. Chu, H. L. Chen, C. C. Shih, C. H. Pan, Y. T. Su, P. J. Wu, S. M. Sze, “High performance, excellent reliability multifunctional graphene oxide doped memristor achieved by self-protective compliance current structure”, In 2014 IEEE International Electron Devices Meeting (IEDM), 33-34, 2014. (国际顶级会议)

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